Investigation of In 0.53Ga,,47As/AIAs resonant tunnelifig diodes for high speed switching
نویسندگان
چکیده
We report an investigation of In,,,GacJ, As/AlAs resonant tunneling diodes designed for high speed switching applications. Experimental peak current densities are observed to increase with decreasing AlAs barrier thicknesses, in good agreement with a two band tunneling calculation, which includes the effects of strain and band bending. Swing voltages over the range OS-l.0 V are demonstrated to be controllable via the thickness of a lightly doped depletion layer. Estimated RC time constants are compared with intrinsic tunneling times for the samples studied. A sample with 6 monolayer AlAs barriers yields devices with peak current densities of 3.1 x lo5 A/cm’ and peak-to-valley current ratios of 6:l. The minimum rise time in this sample is calculated to be limited by RC switching delays to 1.6 ps.
منابع مشابه
A TECHNOLOGY FOR MONOLITHIC INTEGRATION OF HIGH-INDIUM-FRACTION RESONANT-TUNNELING DIODES WITH COMME - Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Confe
A novel epitaxy-on-electronics (EoE) technology, developed at MIT, allows the integration of 111-V heterostructures and commercial VLSI GaAs circuits. We have designed a monolithic resonant-tunneling diode(RTD) based static random access memory which uses this technique. We review both the EoE process and the design and epitaxial growth techniques for high performance In,Gal-,As/AIAs RTDs suita...
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